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研究業績（学術論文）


  1. Y. Sakisaka, T. Komeda, T. Maruyama, M. Onchi, H. Kato, Y. Aiura, H. Yanashima, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto and K. Hirata, “Angle-resolved photoemission from epitaxial YBa2Cu3O7-x(001) films”, Phys. Rev. B 39 (1989) 2304-2307.
  2. Y. Sakisaka, T. Komeda, T. Maruyama, M. Onchi, H. Kato, Y. Aiura, H. Yanashima, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto and K. Hirata “Angle-resolved photoemission investigation of the electronic band properties of YBa2Cu3O7-x(001)” Phys. Rev. B 39 (1989) 9080-9090.
  3. Y. Sakisaka, T. Maruyama, Y. Morikawa, H. Kato, K. Edamoto, M. Okusawa, Y. Aiura, H. Yanashima, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto and K. Hirata, “Angle-resolved photoemission from epitaxial Nd2-xCexCuO4 films”, Solid State Commun. 74 (1990) 609-611.
  4. Y. Sakisaka, T. Maruyama, Y. Morikawa, H. Kato, K. Edamoto, M. Okusawa, Y. Aiura, H. Yanashima, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto and K. Hirata, “Angle-resolved photoemission from Nd2-xCexCuO4: A dispersive bandlike Fermi-liquid state of Cu 3d character near the Fermi level”, Phys. Rev. B 42 (1990) 4189-4195.
  5. Y. Sakisaka, T. Maruyama, H. Kato, Y. Aiura and H. Yanashima, “Angle-resolved photoemission study of relativistic effects in the bulk electronic structure of Fe”, Phys. Rev. B 41 (1990) 11865-11868.
  6. T. Maruyama, Y. Sakisaka, H. Kato, Y. Aiura and H. Yanashima, “Angle-resolved photoemission study of hydrogen adsorbed on Fe(110)”, Surface Sci. 253 (1991) 147-156.
  7. Y. Aiura, H. Yanashima, H. Fukutani, H. Kato, Y. Sakisaka, T. Maruyama and K. Edamoto, “Hydrogen-Induced -Reconstruction of W(110) Surface studied by Angle-Resolved Photoemission Spectroscopy”, Surface Sci. 283 (1993) 344-348.
  8. Y. Haruyama, H. Fukutani, Y. Aiura, Y. Nishihara, T. Komeda, S. Kodaira, T. Maruyama and H. Kato, “Electronic Structure of Stoichiometric and Reduced SrTiO3(100) Surface: A Photoemission Study”, Jpn. J. Appl. Phys. 32 (1993) Suppl. 32-3, 543-545.
  9. T. Maruyama, Y. Sakisaka, H. Kato, Y. Aiura and H. Yanashima, “CO on Fe(110): An angle-resolved photoemission study”, Surface Sci. 304 (1994) 281-290.
  10. S. Kodaira, Y. Sakisaka, T. Maruyama, Y. Haruyama, Y. Aiura and H. Kato, “Angle-Resolved Photoemission Study of an In-Gap State in TiO2”, Solid State Commun. 89 (1994) 9-12.
  11. Y. Aiura, Y. Nishihara, Y. Haruyama, T. Komeda, S. Kodaira, Y. Sakisaka, T. Maruyama and H. Kato, “Effects of Surface Oxygen Vacancies on Electronic States of TiO2(110), TiO2(001) and SrTiO3(001) Surfaces”, Physica B 194-196 (1994) 1215-1216.
  12. I. H. Inoue, I Hase, Y. Aiura, A. Fujimori, K. Morikawa, T. Mizokawa, Y. Haruyama, T. Maruyama and Y. Nishihara, “Systematic Change of Spectral Function Observed by Controlling Electron Correlation in Ca1-xSrxVO3 with Fixed 3d1 Configuration”, Physica C 235-240 (1994) 1007-1008.
  13. Y. Aiura, H. Bando, T. Maruyama, Y. Nishihara, Y. Haruyama, S. Kodaira, T. Komeda, Y. Sakisaka and H. Kato, “Effect of surface oxygen vacancies on electronic states of reduced SrTiO3(110) surface”, Physica C 235-240 (1994)1009-1010.
  14. T. Maruyama, Y. Aiura, Y. Nishihara, T. Ito, K. Oka, Y. Ohashi, Y. Haruyama and H. Kato, “Photoemission Study of La-System Cuprate Oxide Superconductors”, Physica C 235-240 (1994) 1049-1050.
  15. I. H. Inoue, I. Hase, Y. Aiura, A. Fujimori, Y. Haruyama, T. Maruyama and Y. Nishihara, “Systematic Development of the Spectral Function in the 3d1 Mott-Hubbard System Ca1-xSrxVO3”, Phy. Rev. Lett. 74 (1995) 2539-2542.
  16. T. Maruyama, T. Ogawa, K. Akimoto, Y. Kitajima, S. Ito and A. Ishibashi, “Extended X-ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe”, Jpn. J. Appl. Phys. 34 (1995) L539-L542.
  17. S. H. Cho, T. Maruyama and K. Akimoto, “Photoluminescence of undoped GaN grown on c-plane Al2O3 by electron cyclotron resonance molecular beam epitaxy”, Jpn. J. Appl. Phys. 34 (1995) L1575-L1578.
  18. K. Akimoto, T. Ogawa, T. Maruyama and Y. Kitajima, “Extended X-ray Absorption Fine Structure Study of Heavily Cl Doped ZnSe”, J. Cryst. Growth, 159 (1996) 350-353.
  19. T. Maruyama, T. Ogawa, K. Akimoto, Y. Kitajima, S. Ito and A. Ishibashi, “Distribution of Chalcogen Atoms in ZnSSe and ZnMgSSe: EXAFS study”, J. Cryst. Growth 159 (1996) 41-44.
  20. Y. Haruyama, S. Kodaira, Y. Aiura, H. Bando, Y. Nishihara, T. Maruyama, Y. Sakisaka and H. Kato, “Angle-resolved photoemission study of SrTiO3(100) and (110) surfaces”, Phys. Rev. B 53 (1996) 8032-8035.
  21. S.H. Cho, U. Tanaka, K. Hata, T. Maruyama and K. Akimoto, “Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy”, Jpn. J. Appl. Phys.35 (1996) L644-L647.
  22. S.H. Cho, U. Tanaka, T. Maruyama, K. Akimoto, H. Okumura and S. Yoshida, “Cathodoluminescence of GaN films grown under Ga and N rich conditions by radio-frequency-molecular beam epitaxy”, J. Cryst. Growth, 175/176 (1997) 112-116.
  23. K. Akimoto, T. Kobayashi, T. Ogawa, W. Ohtsuka, T. Maruyama and Y. Kitajima, “Defect Structures Determined by EXAFS”, Phys. Stat.sol. (b) 202 (1997) 717-724.
  24. T. Maruyama, T. Ogawa, K. Akimoto and Y. Kitajima, “Extended X-ray Absorption Fine Structure Study of Defects in Cl doped ZnSe”, Solid State Commun. 103 (1997) 453-457.
  25. S. H. Cho, K. Hata, T. Maruyama and K. Akimoto, “Optical and structural properties of GaN films grown on c-plane Al2O3 by electron cyclotron resonance molecular beam epitaxy”, J. Cryst. Growth 173 (1997) 260-265.
  26. K. Akimoto, T. Kobayashi, T. Ogawa, W. Ohtsuka and T. Maruyama, “Incorporation site of Cl in ZnTe and ZnSeTe”, Nonlinear Optics 18 (1997) 235-238.
  27. K. Akimoto, T. Kobayashi, T. Ogawa, W. Ohtsuka, T. Maruyama and Y. Kitajima, “Configuration of Cl atoms in ZnSe and ZnTe”, J. Cryst. Growth, 184/185 (1998) 480-484.
  28. T. Maruyama, Y. Miyajima, K. Hata, S. H. Cho, K. Akimoto, H. Okumura, S. Yoshida and H. Kato, “Electronic Structure of Wurtzite- and Zinc Blende-GaN Studied by Angle-Resolved Photoemission”, Journal of Electronic Materials, 27 (1998) 200-205.
  29. T. Onitsuka, T. Maruyama, K. Akimoto and Y. Bando, “Interface structure of GaN on sapphire (0001) studied by transmission electron microscope”, J. Cryst. Growth, 189/190 (1998) 295-300
  30. A. Yamada, T. Maruyama and K. Akimoto, “Growth of c-GaN on carbonized Si(100) surfaces”, J. Cryst. Growth, 189/190 (1998) 401-405.
  31. T. Maruyama, Y. Miyajima, S.H. Cho, K. Akimoto and H. Kato, “Angle-resolved photoemission study of the wurtzite-GaN (0001)”, Physica B 262 (1999) 240-246.
  32. A. Yamada, K. P. Ho, T. Akaogi, T. Maruyama and K. Akimoto, “Layered compound substrates for GaN growth”, J. Cryst. Growth, 201/202 (1999) 332-335.
  33. U. Tanaka, T. Maruyama and K. Akimoto, “Epitaxial growth of GaN/Pd/GaN sandwich structure”, J. Cryst. Growth, 201/202 (1999) 444-447.
  34. A. Yamada, K. P. Ho, T. Maruyama and K. Akimoto, “Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound”, Appl. Phys. A 69 (1999) 89-92.
  35. T. Maruyama, H. Sasaki, S. Morishima and K. Akimoto, “Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy”, Phys. Status Solid (b): 216 (1999) 629-632.
  36. S. Morishima, T. Maruyama, T. Tanaka, Y. Masumoto and K. Akimoto, “GROWTH OF Eu DOPED GaN AND ELECTROLUMINESCENCE FROM MIS STRUCTURE”, Phys. Status Solid (a): 176 (1999) 113-117.
  37. T. Maruyama, H. Sasaki, S. Morishima and K. Akimoto, “Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy”, Jpn. J. Appl. Phys. 38 (1999) L1306-1308.
  38. T. Maruyama, T. Hasegawa, N. Komuro, H. Yamada, W. Ohtsuka, K. Akimoto, Y. Kitajima, K. Maeda and E. Yagi, “Compensation centers in ZnSeTe”, J. Appl. Phys. 86 (1999) 5993-5999.
  39. T. Maruyama, A. Hirasawa, T. Shindow, K. Akimoto, H. Kato and A. Kakizaki,  “Energy-Level alignment at NTCDA/metal interfaces studied by UPS”, J. of Lumin. 87-89 (2000) 782-784.
  40. H. Yamada, M. Tanaka, T. Maruyama, Y. Masumoto, T. Yao and K. Akimoto, “Efficient luminescence from Sm doped ZnSSe/undoped-ZnS multi-quantum wells”, J. Cryst. Growth. 214/215 (2000) 954-957.
  41. T. Maruyama, H. Yamada, T. Mochizuki, K. Akimoto and E. Yagi, “Quenching mechanism of luminescence in Sm doped ZnS”, J. Cryst. Growth. 214/215 (2000) 935-938.
  42. S. Ishizuka, T. Maruyama and K. Akimoto, “Thin-Film Deposition of Cu2O by Reactive Radio-Frequency Magnetron Sputtering”, Jpn. J. Appl. Phys. 39 (2000) L786-L788.
  43. T. Maruyama, N. Sugawara, A. Hirasawa and K. Akimoto, “Chemical bonding and electronic properties of NTCDA/metal interfaces”, Surf. Sci. 493/1-3 (2001) 697-701.
  44. S. Ishizuka, S. Kato, T. Maruyama and K. Akimoto, “Nitrogen Doping into Cu2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering”, Jpn. J. Appl. Phys. 40 (2001) 2765-2768.
  45. T. Maruyama, Y. Hagio, T. Miyajima, S. Kijima, Y. Nanishi, and K. Akimoto, “Effect of Annealing on the interface properties between Ni and p-GaN”, Phys. Status Solid (a) 188 (2001) 375-378.
  46. Y. Hagio, H. Sugahara, T. Maruyama, Y. Nanishi, K. Akimoto, T. Miyajima and S. Kijima, “Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy”, Jpn. J. Appl. Phys. 41 (2002) 2493-2496.
  47. T. Ohashi, Y. Saito, T. Maruyama and Y. Nanishi, “Effect of atomic hydrogen irradiation on native oxides of InN surface”, J. Cryst. Growth 237-239 (2002) 1022-1026.
  48. T. Maruyama, S. Morishima, H. Bang, K. Akimoto and Y. Nanishi, “Valence transition of Eu ions in GaN near the surface”, J. Cryst. Growth 237-239 (2002) 1167-1171.
  49. T. Araki, H. Kagatsume, T. Noguchi”, T. Maruyama and Y. Nanishi, “Effect of nitridation on cystallinity of polycrystalline GaN”, phys. stat. sol. (c) 0(1) (2002) 200-204.
  50. M. Tanaka, H. Yamada, T. Maruyama and K. Akimoto, “Well-width dependence of optical properties of rare-earth ion-doped ZnSSe/undoped ZnS multiple quantum wells”, Phys. Rev. B67 (2003) 045305.
  51. T. Suzuki, S. Naritsuka, T. Maruyama and T. Nishinaga, “Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy” Cryst. Res. Technol. 38, No. 7–8 (2003) 614 –618.
  52. S. Naritsuka, O. Kobayashi and T. Maruyama, “Numerical model for Oxygen incorporation in AlGaAs layer grown by molecular beam epitaxy” Jpn. J. Appl. Phys. 42 (2003) L1041-1043.
  53. S. Naritsuka, O. Kobayashi, K. Mitsuda and T. Nishinaga, “Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy” J. Crystal Growth 254 (2003) 310-315.
  54. T. Maruyama, K. Yorozu, T. Noguchi, Y. Seki, Y. Saito, T. Araki and Y. Nanishi, “Surface treatment of GaN and InN using (NH4)2Sx”, physica status solidi (c), 0(7) (2003) 2031-2034.
  55. S. Naritsuka, M. Okada and T. Maruyama, “Simulation of Three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates” Jpn. J. Appl. Phys. 43 (2004) 3289-3292.
  56. T. Maruyama, K. Matsuda and S. Naritsuka, “Multinuclear layer-by-layer growth on Ge(111) by LPE”, J. Cryst. Growth 275 (2005) e2155-e2160.
  57. K. Saitoh, T. Suzuki, T. Maruyama and S. Naritsuka, “Defect formation mechanism in beam-induced lateral epitaxy on (111)B GaAs substrate” J. Crystal Growth 277 (2005) 51-56.
  58. S. Naritsuka, T. Suzuki, K. Saitoh, T. Maruyama and T. Nishinaga, “Growth mechanism of beam induced lateral epitaxy on (001) GaAs substrate in molecular beam epitaxy” J. Cryst. Growth 276 (2005) 64-71.
  59. H. Bang, Y. Ito, Y. Kawamura, E. Hosoda, C. Yoshida, T. Maruyama, S. Naritsuka and M. Kusunoki, “Observation of Nanosized Caps Structures on 6H-SiC(0001(－)) Substrates by Ultrahigh-Vacuum Scanning Tunneling Microscopy”, Jpn. J. Appl. Phys. 45 (2006) 372-374.
  60. M. Mizutani, F. Teramae, O. Kobayashi, S. Naritsuka and T. Maruyama, “Precise control of growth of DBR by MBE using in-situ reflectance monitoring system”, phys. stat. sol. (c)3 (2006) 659-662.
  61. M. Mizutani, F. Teramae, K. Takeuchi, T. Murase, S. Naritsuka and T. Maruyama, “Precise control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor” Jpn. J. Appl. Phys., 45 4B (2006) 3552-3555.
  62. T. Kondo, K. Saito, Y. Yamamoto, T. Maruyama and S. Naritsuka, “Fabrication of GaN dot structures on Si substrates by droplet epitaxy”, phys. stat. sol. (a) 203 (2006) 1700-1703.
  63. T. Maruyama, H. Bang, Y. Kawamura, N. Fujita, K. Tanioku, T. Shiraiwa, Y. Hozumi, S. Naritsuka and M. Kusunoki, “Scanning-tunneling-microscopy of the formation of carbon nanocaps on SiC(000-1)”, Chem. Phys. Lett. 423 (2006) 317-320.
  64. T. Maruyama, T. Shiraiwa, N. Fujita, Y. Kawamura, S. Naritsuka and M. Kusunoki, “Characterization of small-diameter carbon nanotubes and carbon nanocaps on SiC(000-1) using Raman spectroscopy”, Jpn. J. Appl. Phys. 45 (2006) 7231-7233.
  65. S. Naritsuka, T. Kondo, H. Otsubo, K. Saitoh, Y. Yamamoto and T. Maruyama, “In situ annealing of GaN dot structures grown by droplet epitaxy on (111)Si substrates”, J. Cryst. Growth 300 (2007) 118-122.
  66. T. Maruyama, H. Bang, N. Fujita, Y. Kawamura, S. Naritsuka and M. Kusunoki, “STM and XPS studies of early stages of carbon nanotube growth by surface decomposition of 6H-SiC(000-1) under various oxygen pressures”, Diamond and Related Materials 16 (2007) 1078-1081.
  67. T. Maruyama, H. Otsubo, T. Kondo, Y. Yamamoto and S. Naritsuka,” Fabrication of GaN dot structures by droplet epitaxy using NH3“, J. Cryst. Growth 301-302 (2007) 486-489.
  68. S. Naritsuka, S. Matsuoka, T. Kondo, K. Saitoh, T. Suzuki, Y. Yamamoto and T. Maruyama, “Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate”, J. Cryst. Growth 301-302 (2007) 42-46.
  69. H. Otsubo, T. Kondo, Y. Yamamoto, T. Maruyama and S. Naritsuka, “Effect of substrate surface on GaN dot structure grown on Si(111) by droplet epitaxy”, phys. stat. sol. (c)4 (2007) 2322-2325.
  70. Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama and S. Naritsuka, “GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation technique”, phys. stat. sol. (c)4 (2007) 2326-2329.
  71. S. Naritsuka, S. Matsuoka, Y. Yamashita, S. Matsuoka, Y. Yamamoto and T. Maruyama, “Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on (001)GaAs substrates”, J. Cryst. Growth 310 (2008) 1571-1575.
  72. S. Naritsuka, Y. Tejima, K. Fujie and T. Maruyama, “Liquid-phase epitaxy of GaAs by temperature difference method to realize wide lateral growth”, J. Cryst. Growth 310 (2008) 1642-1646.
  73. K. Tanioku, T. Maruyama and S. Naritsuka, “Low temperature growth of carbon nanotubes on Si substrates in high vacuum”, Diamond Relat. Mater. 17 (2008) 589-593.
  74. S. Naritsuka, S. Matsuoka, Y. Ishida and T. Maruyama, “Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrate, J. Cryst. Growth 311 (2009) 1778-1782.
  75. K. Ghosh, M. Kumar, T. Maruyama and Y. Ando, “Micro-structural, electron-spectroscopic and field-emission studies of carbon nitride nanotubes grown from cage-like and linear carbon sources”, Carbon 47 (2009) 1565-1575.
  76. H. Wang, K. Ghosh, Z. Li, T. Maruyama, S. Innoue and Y. Ando, “Direct Growth of Single-Walled Carbon Nanotube Films and Their Optoelectric Properties”, J. Phys. Chem. C, 113 (2009) 12079-12084.
  77. K. Ghosh, M. Kumar, T. Maruyama and Y. Ando, “Tailoring the Field Emission Property of Carbon Nitride Nanotubes by Controlling the Graphitic/Pyridinic N Doping”, Carbon 48 (2010) 191-200.
  78. K. Ghosh, M. Kumar, H. Wang, T. Maruyama and Y. Ando, “Nitrogen-Mediated Wet-Chemical Formation of Carbon Nitride/ZnO Heterojunctions for Enhanced Filed Emission”, Langmuir, 26 (2010) 5527.
  79. T. Maruyama, K. Sato, Y. Mizutani, K. Tanioku, T. Shiraiwa and S. Naritsuka, “Low-Temperature Synthesis of Single-Walled Carbon Nanotubes by Alcohol Gas Source Growth in High Vacuum”, J. Nanotechnol. Nanosci. 10 (2010) 4095-4101.
  80. K. Sato, T. Shiraiwa, T. Maruyama and S. Naritsuka, “Effect of Buffer Thickness on Single-Walled Carbon Nanotube Growth using Aluminum Oxide Buffer Layer with Alcohol Gas Source Method”, J. Nanotechnol. Nanosci. 10 (2010) 3929-3933.
  81. K. Ueda, Y. Iijima, T. Maruyama and S. Naritsuka, “Effect of Annealing in a Hydrogen Atmosphere on Carbon Nanocap Formation in Surface Decomposition of 6H-SiC(000-1)”, J. Nanotechnol. Nanosci. 10 (2010) 4054-4059.
  82. K. Ghosh, M. Kumar, T. Maruyama and Y. Ando, “Controllable growth of highly N-doped carbon nanotubes from imidazole: a structural, spectroscopic and field emission study”, J. Mater. Chem. 20 (2010) 4128-4134.
  83. C. –H. Lin, R. Abe, T. Maruyama, S. Naritsuka, “Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy”, J. Cryst. Growth 318 (2011) 446-449.
  84. C. –H. Lin, R. Abe, T. Maruyama, S. Naritsuka, “Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy”, J. Cryst. Growth 318 (2011) 450-453.
  85. Y. Mizutani, K. Sato, T. Maruyama, S. Naritsuka, “SWNT growth on Al2Ox/Co/Al2Ox multilayer catalyst using alcohol gas source method in high vacuum”, J. Cryst. Growth 318 (2011) 1101-1104.
  86. Yuki Nagae, Takenori Iwatsuki, Yuya Shirai, Yuki Osawa, Shigeya Naritsuka, Takahiro Maruyama: “Effect of mask material on selective growth of GaN by RF-MBE”, J. Cryst. Growth, 324(2011)  88-92.
  87. Takahiro Maruyama, Satoshi Sakakibara, Shigeya Naritsuka, Kenta Amemiya, “Initial stage of carbon nanotube formation process by surface decomposition of SiC: STM and NEXAFS study”, Diamond & Relat. Mater. 20 (2011) 1325-1328.
  88. Takahiro Maruyama, Yoshihiro Mizutani, Shigeya Naritsuka, Sumio Iijima:”Single-Walled Carbon Nanotube Growth in High Vacuum using Pt Catalyst in Alcohol Gas Source Method”, Materials Express, 1 (2011) 267-272.
  89. Takayasu Iokawa, Tomoyuki Tsutsui, Shigeya Naritsuka, Takahiro Maruyama: “Direct Growth of Carbon Nanotubes on ZnO(000-1) Substrate Surface using Alcohol Gas Source Method in High Vacuum”, Jpn. J. Appl. Phys. 51 (2012) 01AH04(4 page).
  90. Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi and Takahiro Maruyama, “X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source”, Jpn. J. Appl. Phys. 51 (2012) 048004 (2 pages)
  91. Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Yohei Monno and Takahiro Maruyama, “X-ray Photoemission Spectroscopy Study of Low Temperature Nitridation of GaAs(001) Surface using RF-radical source”, Jpn. J. Appl. Phys. 51 (2012) 015602(4 page).
  92. Takahiro Maruyama, Yuki Ishiguro, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Kenta Amemiya, Hideshi Ishii, Toshiaki Ohta, “Near-edge X-ray absorption fine structure study of vertically aligned carbon nanotubes grown by the surface decomposition of SiC", Jpn. J. Appl. Phys.51 (2012) 055102(3 page).
  93. Chia-Hung Lin, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka, "Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy", Appl. Phys. Express 5 (2012) 045501(3 page).
  94. Yoshihiro Mizutani, Naoya Fukuoka, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima,"Single-Walled Carbon Nanotube Synthesis on SiO2/Si substrates at very low pressures by the alcohol gas source method using a Pt catalyst", Diamond & Relat. Mater. 26 (2012)78-82.
  95. Chia-Hung Lin, Ryota Abe, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka, “Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy”, J. Cryst. Growth 352 (2012) 214-217.
  96. Naoya Fukuoka, Yoshihiro Mizutani, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima, "Low Temperature Syntehesis of Single-Walled Carbon Nanotubes in a High Vacuum using Pt catalyst in Alcohol Gas Source Method", Jpn. J. Appl. Phys. 51 (2012) 06FD23 (4 page).
  97. Takahiro Maruyama, Satoshi Sakakibara, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Hiroyuki Yamane, Nobuhiro Kosugi, “Band alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy”, Appl. Phys. Lett. 101 (2012) 092106 (4 page).
  98. Hiroki Kondo, Naoya Fukuoka, Takahiro Maruyama, “Low Temperature Growth of Single-Walled Carbon Nanotubes from Pt Catalysts under Low Ethanol Pressure by Alcohol Gas Source Method”, J. Nanotechnology 2012 (2012) 690304 (5 page).
  99. Takatoshi Yajima, Satoshi Sakakibara, Shigeya Naritsuka, Hiroyuki Yamane, Nobuhiro Kosugi, and Takahiro Maruyama, “Formation of Carbon Nanotube/n-type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties”, Jpn. J. Appl. Phyts. 52 (2013) 06GD01.
  100. Hiroki Kondo, Naoya Fukuoka, Ranajit Ghosh, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima, “Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalysts Using Alcohol Gas Source Method in High Vacuum”, Jpn. J. Appl. Phyts. 52 (2013) 06GD02.
  101. Shigeya Naritsuka, Chia-Hung Lin, Shota Uchiyama, and Takahiro Maruyama, “Temperature dependence of a-plane GaN low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy”, physica status solidi (c) Vol.10 No.3 pp.392-395, (2013).
  102. Yusuke Kito, Hiroya Yamauchi, Shigeya Naritsuka and Takahiro Maruyama, “Study of Thermal Crystallization of Ni Catalysis for Graphene CVD”, J. Res. Inst. Meijo Univ., Vol.12 pp.43-48 (2013).
  103. Daisuke Kanbayashi, Takeshige Hishida, Masahumi Tomita, Hiroyuki Takakura, Takahiro Maruyama and Shigeya Naritsuka, “Liquid Phase Electro-Epitaxy of c-plane GaN layer under atmospheric pressure”, J. Res. Inst. Meijo Univ., Vol.12 pp.99-104 (2013).
  104. Shota Uchiyama, Chia-Hung Lin, Yohei Suzuki, Takahiro Maruyama, and Shigeya Naritsuka, “Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal–Organic Molecular Beam Epitaxy” Jpn. J. Appl. Phys., Vol.52 No.8 pp.08JE04/1-08JE04/4 (2013).
  105. S. Naritsuka, C.H. Lin, S. Uchiyama, and T. Maruyama, “Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy”, J. Crystal. Growth Vol.378 No.9 pp.303-306, (2013）.
  106. Daisuke Kambayashi, Hiroyuki Takakura, Masafumi Tomita, Muneki Iwakawa, Yosuke Mizuno, Junpei Yamada, Takahiro Maruyama and Shigeya Naritsuka, “Selective growth of GaN by liquid phase electroepitaxy using aluminaum oxide mask”, Jpn. J. Appl. Phys.53 (2014) 11RC02.
  107. Noriyuki Kuwano, Yuki Ryu, Masatoshi Mitsuhara, Chia-Hung Lin, Shota Uchiyama, Takahiro Maruyama, Yohei Suzuki, and Shigeya Naritsuka, “Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)”, J. Cryst. Growth 401(2014) 409-413.
  108. Yujirou Hirota, Yuya Shirai, Hiromu Iha, Yusuke Kito, Manabu Suzuki, Hironao Kato, Nao Yamamoto, Takahiro Maruyama, and Shigeya Naritsuka, “Selective growth of (001) GaAs using a patterned graphene mask”, J. Cryst. Growth, Vol.401, No.9, pp.563-566 (2014).
  109. Takahiro Maruyama, Hiroki Kondo, Naoya Fukuoka, Shigeya Naritsuka, “Growth of Single-Walled Carbon Nanotubes from Pt catalysts by the Alcohol Gas Source Method under Low Ethanol Pressure: Growth Temperature Dependence”, Trans. Mater. Res. Soc. Jpn. 38 (2014) 585-588.
  110. Takahiro Maruyama, Shigeya Narituska, Kenta Amemiya, “In Situ High-Temperature NEXAFS Study on Carbon Nanotube and Graphene Formation by Thermal Decomposition of SiC”, J. Phys. Chem. C 119 (2015) 26698-26705.
  111. Hiromu Iha, Yujiro Hirota, Masatsugu Yamauchi, Nao Yamamoto, Takahiro Maruyama, “Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer”, phys. status solidi c 12 (2015) 524-527.
  112. Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama, “Synthesis of single-wallec carbon nanotubres from Pd catalysts by gas source method using ethanol in high vacuum”, Jpn. J. Appl. Phys. 55 (2015) 01AE02.
  113. Akinari Kozawa, Hiroki Kondo, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama, “Single-Walled Carbon Nanotube Growth from Pt catalysts using Alcohol Gas Source Method: Comparison with Co catalysts”, Trans. Mater. Res. Soc. 40 (2015) 405-408.
  114. Ranajit Ghosh, Takahiro Maruyama, Hiroki Kondo, Koji Kimoto, Takuro Nagai, Sumio Iijima, “Synthesis of single-walled carbon nanotubes on graphene layers”, Chem. Commun. 51 (2015) 8974.
  115. Daisuke Kambayashi, Hiroyuki Takakura, Masafumi Tomita, Muneki Iwakawa, Yosuke Mizuno, Takahiro Maruyama, Shigeya Naritsuka, “Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped subsrate”, Jpn. J. Appl. Phys. 55 (2016) 105502.
  116. Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka, “Direct growth of multilayer graphene by precipitation using W capping layer”, Jpn. J. Appl. Phys. 55 (2016) 100302.
  117. Hoshimitsu Kiribayashi, Seigo Ogawa, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama, "Low-temperature growth of single-walled carbon nanotubes using Al2O3/Pd/Al2O3 multilayer catalyst by alcohol gas source method at high vacuum",Jpn. J. Appl. Phys. 55 (2016) 06GF04.
  118. Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama, "Single-walled carbon nanotube growth on SiO2/Si using Rh catalysts by alcohol gas source chemical vapor deposition", Diamond Relat. Mater. 63 (2016) 159-164.
  119. Mrinmoy Goswami, Ranajit Ghosh, Takahiro Maruyama, Ajit Kumar Meikap, "Polyaniline/carbon nanotube/CdS quntum dot composites with enhanced optical and electrical properties”, Appl. Surf. Sci. 364 (2016) 176-180.
  120. Takahiro Saida, Takahiro Kogiso, Takahiro Maruyama, “Synthesis of Carbon Composite Spheres from Graphene Oxide”, Chem. Lett. 45 (2016) 330-332.
  121. Takahiro Maruyama, Hiroki Kondo, Ranajit Ghosh, Akinari Kozawa, Shigeya Naritsuka, Yoko Iizumi, Toshiya Okazaki, Sumio Iijima, “Single-walled carbon nanotube synthesis using Pt catalysts under low ethanol pressure via cold-wall chemical vapor deposition in high vacuum”, Carbon 96 (2016) 6-13.
  122. Takahiro Maruyama, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka Sumio Iijima, “Low temperature growth of single-walled carbon nanotubes from Rh catalysts”, Carbon 116 (2017) 128-132.
  123. Takahiro Maruyama, Hiroki Kondo, Ranajit Ghosh, Akinari Kozawa, Shigeya Naritsuka, Yoko Iizumi, Toshiya Okazaki, Sumio Iijima, “Single-walled carbon nanotube synthesis using Pt catalysts under low ethanol pressure via cold-wall chemical vapor deposition in high vacuum”, Carbon 96 (2016) 6-13.